ugg botas Vertical double diffusion MOS conductive

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Vertical double diffusion MOS conductive tube and its application

In order to give full play to these advantages, almost without exception, the power field controller in parallel pieces of the integrated structure. The VDMOS, for example,[link widoczny dla zalogowanych], a chip within a single area where Cao has been integrated into the 150,[link widoczny dla zalogowanych],000 yuan cell, its integration to 1-3 × 10. Cell / square inch level. V, ~ 1 ~ 105 of the main application. In the application of power electronics technology '1) in the uninterruptible power supply, switching power supply side can greatly improve the working frequency, reduced size, weight - to reduce costs and improve efficiency. (2) converters for power conversion devices, the drive is simple, fast switching speed and significantly improved the performance of the converter, such as thin for automotive, electronic ballast inverter, lighting circuits, etc., especially in small and medium power converters,[link widoczny dla zalogowanych], more obvious advantages. (3} in the processing of high-frequency ultrasonic heating device, used as the primary power oscillation and amplifier parts. The devices generally have high efficiency, high frequency, a simple and reliable. On the application of the computer characteristics of the VDMOS power devices can be directly integrated circuit logic signal as the drive signal, the output driving a few amps of current implementation of various components such as relays stepper machine printers, optical disk drive array, and so instructed. Interface with it than with other power devices have circuit is simple, using fewer components, small size, light weight, reliable, fast and so on. many of the original system can not be achieved, and now after using the VDMOS power devices can be easily achieved. in audio equipment of VDMOS devices have very linear transfer characteristics of the ideal, so use it to manufacture audio equipment can greatly reduce the distortion, simplifying the circuit, but also easy to implement various protection functions, and thus a large number used in modern hi-fi equipment. in the high range of applications. As the channel VDMOS power devices are very short, but also a majority carrier conduction device, so a high cutoff frequency, the high frequency range, VDMOS power devices than bipolar power devices have obvious advantages, so in communications, microwave,[link widoczny dla zalogowanych], radar and other equipment have gained an increasingly wide range of applications. VI. Summary 1.VDMOS conductive pipe is vertical power devices double diffusion, and the early management of different MOS, It retains the characteristics of the original MOS tube, and due to its Amoy Road, a short, high-drain drift region resistance and vertical conductive features, which in turn greatly enhanced the ability of the device voltage, current handling capability and switching speed demons. 2.VDMOS tube with multiple cells in parallel to increase the on-state current. To avoid the surface breakdown under high pressure, at f into the field plate. field ring termination structure. 3.VDMOS control the placement of P-type body region with the N''type jji 【area of the metal film shorts,[link widoczny dla zalogowanych], in order to prevent possible the second breakdown, domestic products and foreign N channel VDMOS table 2 Yu-source breakdown lay j the smallest leak testing biggest loser biggest the biggest gang-resistance electrical current across the current into capacitor power device name V (BR) fDs (oh } (Q} of foreign models were DSS (VJ maximum 1DfA} TA) g (mV) G (PFJPW) minimum 50OMTP2N50lVN6000KNTVN0345NlM'TM4NSO2N67621XTM4NS0. MTM7N50IRF440lXTM7N50MTM4N45IXTM4N45VN4501AMTM7N45TRF44l1XTMTN45KwM5N40MTM5N4.0IRF330tN6760KWMSN40400MTM8N40VNM00lAlRF54lMTM5N35lRF33lIRF333KWMl5N35033MTM】 5N35IRF55S2N6767M1-M8N20lRF'2302N6758MTM 2Nl0TRF】】】 5N20IRF240l50MTM20N15IRF241VNI200AM1.M 30VN1001Al50TM15l0lRF142RUE24KWM35N1Ol50l260MTM35N061RF1412N676SKWM, 2NO5 can that the tube is actually a reverse conducting type of device. 4.VDMSO tube is both to control its conduction, but also control the shutdown of the full-controlled switching devices of a kind. It's a good structure and technical features, great instead of dual pole-type transistor trend. Appendix: Domestic N channel VDMOS some products and foreign models of control references a field Zhuo Xiong, vertical wells Yasuo-MOS power sector effect l, in the West application. Nikkan Kogyo Shimbun. Showa 49.7. (the switch 39)
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